Optimization of a Miniaturized LDD-MOSFET based on a Hot-Carrier Simulation
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چکیده
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A Numerical Simulation of Hot-carrier Induced Device Degradation
For radical designs the hot-carrier reliability is an important issue. This creates the need for the numerical simulation of hot-carrier induced degradation. From a design point of view, the goal of the degradation simulation will be the hot-carrier aging simulation for the prediction of device lifetime. This simulation requires a complicated set of physical models, which includes the hot-carri...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 1987
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.107.6_553